Fine I cede. No nation with a reasonably competent security and defence apparatus eg Australia could come up with a way of destroying a single factory in China assuming they were prepared to accept the consequence of such an act.

Daniel

With only short legged Hornets and SH, are you kidding? You won’t even reach the shoreline.

My view is that the SH could use its superior avionics to watch the J-10 run rings around it.

Last time the DoD mentioned the J-10, it was compared to the EF-2000 and Rafale instead of the F-16 Block 30. The Hornet never entered the equation, which may tell you a little about where the Hornet rates (i.e. below all three of them).

The first time, it was compared to the FA-18 Hornet. Then the Super Hornet. Then F-16 Block 30/40. Now the Typhoon and Rafale. I would think more of a plane with its performance somewhere between the Gripen and the Rafale, with avionics comparable to the Block 30 or early ’90s Mirage 2000-5.

Anyway, in terms of avionics, mighjt rate the PLAAF aircraft in this order

J-11B –Holohud, larger radar,
J-10/J-10S (2006 production, satellite uplink revised cockpit, new radar)
J-10 (2003-2004 production)
Su-30MKK/MK2
Su-27SK/vanilla J-11 (everything dated except for brute performance)

Star49, you don’t know what a paper is do you? That’s not a development being done, that’s development ALREADY DONE at that time, and submitted for review to peers. Read the titles very carefully and they are creating new applicable technologies.

The problem with you is that you cannot connect that applied technologies is much more closer to applicable military technology than basic general research. I have not seen any paper or product to suggest the creation of an X-Ku band MMIC amplifier or an ultra wide band phase shifter. I see general listings of products, not nothing very specific, in frequency, power output

Your list like duh

PRODUCTION
MW- and pulsing semiconductor components:
-Gunn effect diodes
-Microwave mixer and detector GaAs Shottky diodes
-Nonlinear capacitance diodes and turning diodes
-Multiplier diodes
-Pulse diodes
-Rectifier diodes
-Microwave GaAs Schottky FETs
-Monolithic and hybrid GaAs millimeterwave IC

That’s pretty general.

Read this closely, and they mention frequencies and power output, things that amount to very specific products.

GaAs MMIC PROTOTYPES AND PRODUCTSA partial list of GaAs MMICs that NEDI has developed is given below·Power application: power amplifierdriver amplifier·Receiver use: low noise amplifier mixeroscillator/vcobuffer amplifier·Controlled circuits: switch (SPDT, DPDT) phase shifter (analog, digital)attenuator (analog, digital) limiter·Others: active filter active circulator·Frequency range: L to Ku bandSome typical GaAs MMIC prototypes and products with main characteristics are depicted asfollows.·S-band MMIC frequency-variable front-end receiverRF frequency: 2.0-2.5GHzIF frequency: 30-200MHzNF< 1.5dBGP50 ±0.5dBLO power <5dBm VSWR <1.5·C-band MMIC internally-matched power amplifierFrequency: 5.2-6.2GHz GP>11dBPout3w·X-Ku band MMIC power amplifierFrequency 9-13GHz GP13dBPout2w·2-6GHz MMIC power amplifierGP17dB Flatness ±1dB P-129-30dBmFirst Joint Symposium on Opto- and Microelectronic Devices and Circuits, April 10-15, 2000, Nanjing, China28·2-20GHz MMIC distributed power amplifierGP7.5 ±1dB Pout23dBm·MMIC family for T/R module use Frequency 9.3010.4GHzMMIC power amplifier: Po1-1.5w, GP15-20dBMMIC5 bit phase shifter: IL 9.5dB, VSWR 1.5Phase error (RMS) 3oMMIC SPDT switch: IL 1.5dB ISO 25dB·MMIC DPDT switch Frequency 870-970MHz IL 0.8dBISO 20dBVSWR < 1.2P-0.133dBm Control voltage 0,-3V

I have yet to see any mention of a 6″ GaAs wafer fab in Russia.

Chinese is building assembly line. it does not have any R&D. nor it has Research papers published in world major universities.

You must be an ass for missing this.

http://216.109.125.130/search/cache?…icp=1&amp;.intl=us

25GaAs MMIC Activities in NEDINanbin YangNanjing Electronic Devices Institute524 E. Zhong Shan Road, Nanjing, 210016, ChinaAbstract:This paper reviews the principal activities of NEDI in the field of GaAs MMIC’s withthe emphasis on the fabrication technologies and products characteristics. It also describes some
highlights of NEDI MMIC development and key resources of NEDI MMIC work.Key Words: GaAs MMIC, MESFET, PHEMT, HBT, Fabrication technologiesI.

INTRODUCTION

Nanjing Electronic Devices Institute (NEDI), founded in 1958, is mainly engaged inmicroelectronics, optoelectronics and vaccum electronics. GaAs MMIC is the one of its most important fields on research, development and production with following highlights.

·Starting in 1978·First GaAs MMIC ( X band oscillator MMIC) in China in 1980·First paper on chinese GaAs MMIC reported on IEEE MTT-s International MicrowaveSymposium in 1981·
Own-designed and made Φ2” GaAs high pressure LEC crystal puller in 1983·First chineseΦ2” GaAs processing line in 1990·
First chineseΦ3” GaAs processing line with MMIC CAD center and heterojunction epitaxialmaterials laboratory in 1996·
Own-designed and madeΦ3”/4” GaAs high pressure LEC crystal puller in 1997·Over 150 prototypes and products of GaAs MMICII.

GaAsMMIC RESOURCESNEDI is possessed of many valuable resources for GaAs MMIC regarding the building, theequipment and instrument, the manpower as well as the technology.·Engineers: 65 (including professors and senior engineers)·Clean room: 1500m2(including 60m2class 10 photolithography area)·Materials: ΔHigh pressure LEC crystal pullers for Φ2”, 3”/4” GaAs ingot ΔMBE forΦ3” GaAs wafer ΔMOCVD for Φ2”, 3” 4” GaAs wafer·Design:ΔWorkstations: HP9000/700, SUN 10 ΔMicrowave devices ,circuits design andanalytical softwares: Ansoft, HP-EESOF, Compact Explore, GATES POSES,First Joint Symposium on Opto- and Microelectronic Devices and Circuits, April 10-15, 2000, Nanjing, China26MDS, ADS, IC-CAP, Cadence·Mask: ΔPattern generator ΔRepeater·Chip fabricationΔSteppers, G-line, I-line ΔDUV mask aligner ΔIR backside aligner Δtrack ΔPECVDsΔRIEs ΔSpray etcher ΔIon implantersΔRTA ΔEB evaperators ΔSputtering systems Δ Wafer lappingmachines ΔWafer polishing machines ΔDicing system
ΔWire bonding machines ΔDie bonding machines·DiagnosticsΔScanning electron microscope Δ1500 x optical microscopesΔEllipsometer ΔHall effect measurement systemΔC-V profiler ΔAlpha step film thickness meterΔStress measuring system·TestΔNetwork analyzers ΔSpectrum analyzersΔNoise analyzers ΔPower testersΔOn-wafer autoprobers ΔParametric testerIII.GaAsMMIC FABRICATION TECHNOLOGIESNEDI has successfully established 3 kinds of Φ3” GaAs fabrication technologies with somefeatures1.Ion implantation MESFET process·Forming a n active layer for the channel and a n+ Ωcontact layers for the sourceand drain by ion implantation·Rapid thermal annealing with a special dielectric encapsulation for increasing theactivation and improving the uniformity.·I-line stepper lithography to print 0.5μm gate·Si3N4passivation for power devices to obtain the breakdown voltage of larger than15V·Air bridge and backside via hole·Si3N4and Ta2O5MIM capacitors·Yield ≥90%·Power: 0.5W/mm(10W C band)2.MBE PHEMT, HFET PROCESS·Unique optical lithography method to realize 0.25μm T-shape gate structure·Double recess to obtain higher breakdown voltageFirst Joint Symposium on Opto- and Microelectronic Devices and Circuits, April 10-15, 2000, Nanjing, China27·Power: 1 W/mm (X band) and 300mW (34GHz)3.MOCVD HBT process·H+implantation for limiting the E—B junction area and realizing the device isolation as well asminimizing the device parasitic effect·Breakdown voltage of the power device can reach to 20V·Stepper lithography to print the E and B with the 0.5μm space between them·Air bridge with SiN passivation and backside via hale·SiN MIM capacitor·Power: 3W/mm (X band)4.Process control monitor (PCM) and statistical process control (SPC)
PCM and SPC are employed on the processing line to monitor the process parameters and
improve the yield.5.Processing capacity
250 wafets/weekIV.

GaAs MMIC PROTOTYPES AND PRODUCTSA partial list of GaAs MMICs that NEDI has developed is given below·Power application: power amplifierdriver amplifier·Receiver use: low noise amplifier mixeroscillator/vcobuffer amplifier·Controlled circuits: switch (SPDT, DPDT) phase shifter (analog, digital)attenuator (analog, digital) limiter·Others: active filter active circulator·Frequency range: L to Ku bandSome typical GaAs MMIC prototypes and products with main characteristics are depicted asfollows.·S-band MMIC frequency-variable front-end receiverRF frequency: 2.0-2.5GHzIF frequency: 30-200MHzNF< 1.5dBGP50 ±0.5dBLO power <5dBm VSWR <1.5·C-band MMIC internally-matched power amplifierFrequency: 5.2-6.2GHz GP>11dBPout3w·X-Ku band MMIC power amplifierFrequency 9-13GHz GP13dBPout2w·2-6GHz MMIC power amplifierGP17dB Flatness ±1dB P-129-30dBmFirst Joint Symposium on Opto- and Microelectronic Devices and Circuits, April 10-15, 2000, Nanjing, China28·2-20GHz MMIC distributed power amplifierGP7.5 ±1dB Pout23dBm·MMIC family for T/R module use Frequency 9.3010.4GHzMMIC power amplifier: Po1-1.5w, GP15-20dBMMIC5 bit phase shifter: IL 9.5dB, VSWR 1.5Phase error (RMS) 3oMMIC SPDT switch: IL 1.5dB ISO 25dB·MMIC DPDT switch Frequency 870-970MHz IL 0.8dBISO 20dBVSWR < 1.2P-0.133dBm Control voltage 0,-3V

—-

Oh Gad all you showed is a Mikron UHF solid state module.

Russia Transfers Work on China’s Ilyushins
By NABI ABDULLAEV, MOSCOW
http://www.defensenews.com/story.php?F=2476636&C=airwar

Russia’s state arms trader, Rosoboronexport, has decided to return to Russia the bigger part of a $1 billion contract for 38 Il-76 and Il-78 planes ordered by China.

Uzbekistan’s Tashkent Chkalov Aircraft Association (TAPOiCh), which initially was awarded the whole contract in 2005, now will build only 15 of the transport planes as a subcontractor to Russia’s Ilyushin in 2008-2010. Ilyushin will make the remaining 23 planes, said a source in the Russian state-owned aviation holding, the United Aircraft Corp. (UAC).

First deliveries under the contract between Rosoboronexport and China’s Defense Ministry were to begin in 2007. China was to get 34 military transport jet aircraft (NATO codename: Candid) and four Il-78 aerial refueling tankers (NATO codename: Midas) for $1.045 billion.
Contract Was Stalled

But in 2006, TAPOiCh refused to sign a production contract with Rosoboronexport at that price, the UAC executive said.

“TAPOiCh had no big orders for about a decade; many engineers and qualified workers left the enterprise, and I strongly doubt that the plant would be able physically to carry out the whole contract,” the executive said.

The contract got stalled, and Beijing suspended negotiations on several other military procurement contracts with Moscow.
Moving the bulk of the contract to Ilyushin is seen as an attempt to clear the military contracts bottleneck with China, military experts here said.

Viktor Livanov, Ilyushin general director, confirmed the pending contract change with Rosoboronexport, but declined further comment.
Russia’s 23 planes will be built at Ilyushin’s Ulyanovsk-based Aviastar-SP plant. The first plane is expected to be rolled out in 2010, and the Chinese contract is slated to be completed in 2013, the Russian daily Kommersant reported Dec. 27, citing sources in the aviation industry.

The UAC official told Defense News that to complete the contract, Ilyushin and Rosoboronexport will have to find an additional $400 million. He added that there will probably be an internal investigation into how Il-76s and Il-78s were offered to Beijing at a price comparable to that of smaller cargo planes.

To compensate partly for the expenses, Ilyushin refused royalties it was to be paid by TAPOiCh, while Uzbek President Islam Karimov relieved TAPOiCh from having to pay taxes and customs duties for imported parts until the end of 2009, the UAC official said.

In another apparent attempt to boost TAPOiCh’s involvement in the contract, the head of the Russian Federal Agency on Industry, Boris Alyoshin, and UAC President Alexei Fyodorov traveled to Tashkent in November, where they signed a declaration saying that UAC is interested in further cooperation with TAPOiCh and in its eventual entry into the Russian aviation holding.

If Ilyushin carries out the Chinese contract with zero or even negative profit margin, the extra costs still promise Russia eventual returns, said Konstantin Makiyenko, an expert with the Center for Analysis of Strategies and Technologies, a think tank here.

“First, this contract will lead Russia out of the ongoing crisis in the military procurements by China,” he said. “Second, it will allow Ilyushin Co. to set up at home the production lines for the planes that will remain in high demand for the next 10 to 15 years.”

In past years, Venezuela, India and Algeria have expressed interest in buying Il-76s. •

E-mail: [email]nabdullaev@defensenews.com[/email]

That’s not proof at all you make MMICs, which are made by a FAB. Cel companies alone don’t make MMICs; in fact, many don’t even make celphones, routers or even repeaters.

I have read it and it is another firm inside Russia. Russians built market for themselves by buying Cell networks for 10 to 15 countries and than become equipment suppliers to there own networks. just look at ther Infinitewireless wimax tech.
u have no idea about this new business model it is there own creation.

Thats nonsense. There are many celphone companies in the world, but none produces MMICs. Buying a celphone company does not buy the fabs that produce MMICs.