I know their asat is the more primitive type of Co orbital i’M TALKING ABOUT TRACKING GUIDING AN HOMING TO THE THE SATELLITE
ever thought about why Soviet stopped launches. there r&d spending went down since late 70s.
The Defense Department’s recently released “Soviet Space Challenge’ report claims that the Soviet Union’s anti-satellite system is capable of attacking targets at altitudes greater than 5,000 kilometers. Although the main targets of the Soviet’s co-orbital ASAT are reconnaissance satellites that operate at a few hundred kilometers altitude, the report reflects concern that the system can threaten satellites at much higher altitudes. The report also claims that the Soviets continue to test ASAT components on the ground, even though they have not conducted test launches of the system for several years. Congress has banned U.S. ASAT testing against objects in space for the past two fiscal years, in the absence of Soviet test launches
The Soviet’s continued testing of ASAT components and the fact that the system’s SL-11 booster is used regularly to launch other payloads make their ASAT “a distinct threat’ to U.S. spacecraft, according to the Pentagon. There are storage facilities for many ASAT interceptors and launch vehicles at the Tyuratam space complex, the Pentagon reported, and the Soviets could launch several ASATs per day from there.In addition, the Soviets are widely reported to have developed ground-based lasers with a potential ASAT capability and have illuminated U.S. satellites with them. The Pentagon fears that such weapons could blind or destroy satellites in geosynchronous orbit–22,300 nautical miles altitude–including strategic early warning and communications satellites. Such a capability is seen by strategists as more destabilizing than the capability to destroy satellites in lower orbits.
Responding to the charges that the Soviet Union has used ground-based lasers against U.S. satellites, Roald Sagdeyev, head of the Soviet Space Research Institute, told reporters in Washington that the lasers are used for satellite tracking and are not weapons
Except that the Russian failed to developed their own ASAT Some people preferred to stick their head in the sand
Funding to alot of there programs were cutoff. People just have to know history a bit deeper. China does not even have Space tracking station like Okno.
this chinese one is using KKV to directly hit target, which is much more advanced and precise
It is 2007 and u are testing technology of 70s era. which others have abondoned it.
and it is not clear at this point about this test origin. and Russian haved dismissed it as pure speculation.
I’ve heard those rather abstract reports, and I’m very much afraid there is no said basis below them, the anti-satellite one,” Russia’s Defense Minister Sergey Ivanov expressed his attitude to the information about China’s test of anti-satellite weapons.
“I fear it wasn’t the case. Or perhaps, I don’t fear, but it is very good that it wasn’t so,” the minister specified
there is report on PAK-FA from Interavia. i dont know how accurate that is but author said that its take off weight is between JSF and F-22 like 21 tons (but that does not mean its size is smaller). It will be powered by intermediate engine AL-41F1 for prototypes and next engine will be ready by 2015. 3 AESA X band radar (front and sides), ku band. Full stealth across Visible, IR and Radar spectrum. they are testing new materials for that.
Star49, you don’t know what a paper is do you? That’s not a development being done, that’s development ALREADY DONE at that time, and submitted for review to peers. Read the titles very carefully and they are creating new applicable technologies.
The problem with you is that you cannot connect that applied technologies is much more closer to applicable military technology than basic general research. I have not seen any paper or product to suggest the creation of an X-Ku band MMIC amplifier or an ultra wide band phase shifter. I see general listings of products, not nothing very specific, in frequency, power output
Your list like duh
PRODUCTION
MW- and pulsing semiconductor components:
-Gunn effect diodes
-Microwave mixer and detector GaAs Shottky diodes
-Nonlinear capacitance diodes and turning diodes
-Multiplier diodes
-Pulse diodes
-Rectifier diodes
-Microwave GaAs Schottky FETs
-Monolithic and hybrid GaAs millimeterwave ICThat’s pretty general.
Read this closely, and they mention frequencies and power output, things that amount to very specific products.
GaAs MMIC PROTOTYPES AND PRODUCTSA partial list of GaAs MMICs that NEDI has developed is given below·Power application: power amplifierdriver amplifier·Receiver use: low noise amplifier mixeroscillator/vcobuffer amplifier·Controlled circuits: switch (SPDT, DPDT) phase shifter (analog, digital)attenuator (analog, digital) limiter·Others: active filter active circulator·Frequency range: L to Ku bandSome typical GaAs MMIC prototypes and products with main characteristics are depicted asfollows.·S-band MMIC frequency-variable front-end receiverRF frequency: 2.0-2.5GHzIF frequency: 30-200MHzNF< 1.5dBGP50 ±0.5dBLO power <5dBm VSWR <1.5·C-band MMIC internally-matched power amplifierFrequency: 5.2-6.2GHz GP>11dBPout3w·X-Ku band MMIC power amplifierFrequency 9-13GHz GP13dBPout2w·2-6GHz MMIC power amplifierGP17dB Flatness ±1dB P-129-30dBmFirst Joint Symposium on Opto- and Microelectronic Devices and Circuits, April 10-15, 2000, Nanjing, China28·2-20GHz MMIC distributed power amplifierGP7.5 ±1dB Pout23dBm·MMIC family for T/R module use Frequency 9.3010.4GHzMMIC power amplifier: Po1-1.5w, GP15-20dBMMIC5 bit phase shifter: IL 9.5dB, VSWR 1.5Phase error (RMS) 3oMMIC SPDT switch: IL 1.5dB ISO 25dB·MMIC DPDT switch Frequency 870-970MHz IL 0.8dBISO 20dBVSWR < 1.2P-0.133dBm Control voltage 0,-3V
I have yet to see any mention of a 6″ GaAs wafer fab in Russia.
some of the General specification is already there when u click on each individaul product. and why would they put there exact military applications on website?. I have seen interview of owner of IBS (go figure this out). he stated he didnot got admission in Moscow state university because unofficial quota on Jews entry. and the same is true for alot of deserving people. so the scientist u are seeing in west/Israel are mostly second line what russia have produced. just wait untill there multinationals gets on there own feet.
u havent understood there capitalist sytem. thats why u dont understand there application of science.
. the point is creation of science and created weopons based on that science that is not present in public domain.
China has yet to create its own science.
this is from three years ago TV program.
American voice, with Russian translation superimposed] Problems with the functioning of Challenger’s electronic equipment, as well as serious discomfort experienced by members of its crew while flying over the area of Lake Balkhash in the USSR [now situated in Karaganda Region, central Kazakhstan], were prompted by a powerful beam from a Soviet (?TR-3) laser installation, based at the Saryshagan testing ground.
[Male narrator] In conditions of heightened secrecy, work on laser weaponry is also continuing today
Viktor Mikhaylov, head of research at the Russian Federal Nuclear Centre, captioned] The energies there are different, the scale is a thousand times greater, and then it will be a million times greater, if we advance deeper and further.[Male narrator] If this sort of discovery is made, then the opportunity will appear to create generators of any capacity. And, in theory, there would be no limit to the capacity of a proton-ray weapon. The first strike would be the last
Mikhaylov] Laser cannons, I would say, would be a targeted outlet of energy.
http://www.designnews.com/index.asp?layout=article&articleid=CA151359
Thanks to a group of prominent Russian scientists, engineers can obtain quantities of these nanocrystalline structures for review from PPP Consulting, Morrison, CO. The Russian-developed processes used to produce a variety of the nanocrystals include: evaporative-condensation and super-high-frequency plasma chemical treatment. An in situ process also can be used to produce several nanocrystalline structured materials, such as the company’s Danaloy DSC dispersion-strengthened copper alloy
Your papers does not answer the question. It is just explain what China is doing (It does not explain new science which is already not present) and the other Two scholars got educated and worked in US. so it is irrelevant as far as question of Creating New Science
Go into Russian version of that site and see how science is created. I think u dont even understand the meaning of publication. on Siberian Professor was recently Jailed for publishing some thing which was not already Present in defence fields.
http://www.niipp.ru/English/about.html
PRODUCTION
MW- and pulsing semiconductor components:
-Gunn effect diodes
-Microwave mixer and detector GaAs Shottky diodes
-Nonlinear capacitance diodes and turning diodes
-Multiplier diodes
-Pulse diodes
-Rectifier diodes
-Microwave GaAs Schottky FETs
-Monolithic and hybrid GaAs millimeterwave ICMicrowave and millimeterwave modules:
-Gunn diode oscillators
-Low-noise parametric amplifiers
-Monolithic balanced mixers
-Modulators and phase shifter
-Attenuators
-Quasi-monolitic receivers
-Ferrite circulators and isolators
-Autodyne Gunn diode modules
-Digital frequency syntesizer
-Doppler modules
-Sybsystem modules and productsOptoelectronic:
-Light-emitting diodes and indicators
-Infrared emitting diodes
-Solid lamps and photodiode modules-Solar cells and modules
Electronics devices:
-Silicon transistors for general use
-Solid-state detectors of a, b, g-emmission based on GaAs
-GaAs Hall sensors
-ThermofuseMaterials:
-Ceramic (Microwave, electrotechnical)
-Semiconductors materials (GaAs, InP) and complex bonds based on ÀÇÂ5
-Gases (nitrogen, oxygen)-Medical equipment and devices
-Millimeterwave communication systems (LAN bridges)
-Security and access controls
-Industrial, household and automotive
http://phys.tsu.ru/eng/phys/gaas-99.html
TSU was one of the Russian pioneers on the study and practical using of the gallium arsenide. These works have been started in 1954 on the base of the one of the research institutes of Tomsk University – V. D. Kuznetsov Siberian Physical -Technical Institute (SPTI) (established in 1928). These investigations have served a central to opening in Tomsk (1964) the State Research-and Production Enterprise (GNPP “NIIPP”) – one of the leading enterprises of Russia on the element base and the instrument development on the base of gallium arsenide and the related compounds. All-Union Workshops on Gallium Arsenide taken place in Tomsk in 1965, 1968, 1974, 1978, 1982 and 1987 were acknowledgement of merit of Tomsk researchers in this scientific area.The VII Russian conference “GaAs-99” continues this tradition and is dedicated to the 35 anniversary of GNPP “NIIPP”. The conference will take place on the base of TSU, GNPP “NIPP” and SPTI under the patronage of regional and municipal Administrations
http://www.compoundsemi.com/documents/view/cldoc.php3?id=3143
“After careful evaluation of the different epi reactors available on the market today, we have decided to select the Riber MBE machine because it perfectly meets our technical requirements for use in fundamental studies of GaN epitaxy process” stated Mikhael M. Mizerov, Director of the Center for Microelectronics at the Ioffe Institute
About Ioffe Institute
The Ioffe Physico-Technical Institute of the Russian Academy is one of Russia’s largest institutions for research in physics and technology, and employs a staff of 1,300 researchers. It was founded in 1918 in St Petersburg and run for several decades by Abram F. Ioffe, the outstanding scholar and organizer. The Institute is affiliated with the Russian Academy of Sciences, and directed by Prof. Zhores I. Alferov, winner of the 2000 Nobel Prize for physics.
http://compoundsemi.com/news/?date=2003-05-15&id=2953
May 15, 2003…One of the most noted and most deserving compound semi technology pioneers, Nick Holonyak of the University of Illinois, is slated to receive a very prestigious award called The Global Energy Prize. One other USA scientist, Yan Douglas Smith, was named, and the third recipient is Grennady Mesiats from Russia. The 2003 Global Energy Prize, worth $900,000, will be shared equally among the three prize winners
You have no clue about these things. I am not even going deeper into this subject.
Still no sign of GaN/GaAs fab in Russia, development and production.
I was just looking at ur logic. use babelfish. look at there publications. there research on L-Band. and it is small firm started in 1991.
http://www.micran.ru/
1995 – 1997
The development of the standardized series OF SHF it is main.
Use of automated design and development systems for developing the new articles.
Development and the production of the first radio relay equipment. Certification of system.
Development GaAs of monolithic integrated circuits in the cooperation with Tomsk NIIPP.http://www.micran.ru/english/cat/MW.pdf
http://www.micran.ru/UserFile/File/Publ/UHFmodule.pdf
MMIC is T/R module as used in the commercial sense of the word. MMIC for example, is the heart of every celphone, wireless router, WLAN, wireless NIC, even portable handset. If its solid state and wireless, it has to use a MMIC. Soon you can even expect microwave ovens using MMIC (solid state microwave generating and amplifying devices) replacing magnetron/klystron/traveling wave tubes.
thats why i put a company higher up in technology chan. that is not only limited to wireless network, wireless sets but system integrator, software developer and R&D. 5000 in R&D alone. just look at who own Cezh Stroms Telecom and its software support to Vodofone.
Look at this PDF in 2002
http://www.gaasmantech.org/Digests/2003/2003PDF/2-1.pdf
Here you got China building at least four GaAs/GaN fab lines.
Chinese is building assembly line. it does not have any R&D. nor it has Research papers published in world major universities.
Mikron Electronics, whose micron sizes is still 0.18 and above, supplies chips that are still useful but too obsolescent because the Chinese foundries could no longer produce them once these foundries have moved to a smaller micron size.
Swerve, isn’t China Mobile the biggest?
it is not the micron size but the Research power and doing things by itself.
just look at US army technology document. Russia is No2 behind the Japan in Microelectronics research in mid 90s when there was complete choas. ever thought about Chanelised EW, DFRM.
http://www.fas.org/man/dod-101/army/docs/astmp98/eb9.htm
I dont know why u put China in comparision to Russia in Research. this is just laughable. U never understood the first point of fully vertically and horizontally integrated firm.
Sorry but that’s not proof of MMIC design, development and mass production.
what purpose is for MMIC in comercial use? here is R&D part. it comes under sitronics.
http://niitm.ru/english/about
An important activity of the institute is research and development of new types of equipment for advanced technological processes in such areas as nanotechnology, micromechanics and extreme electronics
Sistema’s Mikron electronics plant supplies microchips to China Resources, Leshan Radio Company, BBK, Beijing Alite, Chang Jian, Tian Shui and Nantong Fujitsu
That’s not proof at all you make MMICs, which are made by a FAB. Cel companies alone don’t make MMICs; in fact, many don’t even make celphones, routers or even repeaters.
just look at the business structure. It includes everything from OIL to Radar and Space. and it does not show subsidaries of subsidaries.
http://www.sistema.com/section.html?s=110
Thats nonsense. There are many celphone companies in the world, but none produces MMICs. Buying a celphone company does not buy the fabs that produce MMICs.
offcourse if u look at parent firm of those big russian cellular firms Sistema has the controlling stake in them. and guess what Sistema represents.
Maybe you didn’t read what Phazotron said. They could buld the entire radar except for the TTL module which they had to source somewhere else. Buying a celphone company does mean you also get the facilities to manufacture celphone circuits like MMICs.
I have read it and it is another firm inside Russia. Russians built market for themselves by buying Cell networks for 10 to 15 countries and than become equipment suppliers to there own networks. just look at ther Infinitewireless wimax tech.
u have no idea about this new business model it is there own creation.
it would be interesting to see the new IRST capability. $6B for 126
http://www.vpk-news.ru/article.asp?pr_sign=archive.2007.168.articles.defence_01
“the Details of the capabilities and characteristics of MiG-35 were reported to journalists , and what they saw is sufficient to assess the technological level of the new fighter. Universal interest was toward the latest radar. “Zhuk-ae, with the active antenna array (AFAR). ,Thanks to the cooperation of RSK MiG and corporations Fazotron-niir MiG-35 is the first Russian fighter jet, which has a BRLS, associated with the fifth generation aviation technology .Another ‘miracle’ is-engine (St. Petersburg) RD-33OVT (with thrust vector) . By allowing aircraft to go to such regimes that is beyond a conventional machines , the engine with a nozzle that can rotate in any direction, provides fro “mig” supermaneurability : complete control at the limit, at the lowest (200 to 0 km / h) speed
To Note also that the new “jet” is differs from its predecessors in the new unified family fighter (Mig-29k, Mig-29m2) is not only sonar equipment and the latest optiko-elektronna equipment. The particular interest of the Deputy Prime Minister was rised by the fact that for the first time in history, for both fighters the optic equipment was made by the leading institutions of the Russian space industry. Details of the new equipment has never publicly announced. Moreover, the apparatus has been closed by covers
Russia does not have the capabilities to manufacture a TTL module. You cannot build fabs and refineries alone just to build miltiary TTLs or the cost is extremely prohibitive because the cost of the TTLs will have to pay for the plant and its overhead. That’s why you need a civilian commercial infrastructure that already paid the cost of the fab manufacturing TTLs and MMICs for commercial use
form where this information comes from that Russia does not have TTLs and MMIC capabilitiy? how that Phazotron AESA built? and about money one of there firms just bought Turkish Cellular for $4B in cash.
And in your opinion this must be a proof of the friality of US engines…If you had red carefully the article you quoted yourself, you’d realize that f 100 was introduced in 1974 with an expected life of 16 years (let’s say 3500 hours). “As of 2003” (or almost 3000 past the lifetime guaranteed by P&W) the article says, 3,300 of these engines were still in use! No wonder that some of them “are entering the depot for a third visit”! What new engine??? The newer P&W 229 or GE 129 are larger, so there is no way to fit them inside of any F 16 under blk 40/42, or inside an F 15 A/B/C/D. Only F 16 blk. 40/42 and later of F 15E can accomodate new engines.
I was always amazed by the deep belief of some aviation enthusiasts that they “know better” than a highly professional AF…
they said most of them not some of them and they are not in front line service. and why introduce a new engine which is not backward compatible.
that is exactly done with AL-31 FM series. u can upgrade the old one with increase thrust into any flanker.
the funny thing is US always paint everything from Outside.
http://www.washingtontimes.com/national/20070116-101320-7600r.htm
China has developed several types of ground-based lasers with Russian and Israeli technology, U.S. officials have said.
Russia developed anti-satellite weapons during the Cold War, and U.S. officials think the Russian military is continuing work on the weapons, which include both anti-satellite missiles and ground-based lasers.